Polaris Semiconductor

Powering Next Generation Technologies

Our Solution

Polaris Semiconductor is developing advanced, resilient electronic components that deliver unique DC power management performance in the most demanding applications.

Low noise, unbeatable SWaP

Our devices blend the low noise and small footprint advantages of linear voltage regulators with efficiency and functionality metrics previously only attainable with switching regulators.

DC Voltage Regulators

Cutting-edge electronic systems require DC power with minimal electromagnetic interference (EMI), tiny footprint, and low losses. Our innovative, patented device topology combines an analog integrated circuit with high efficiency optoelectronics in a compact package, delivering inductorless, switching-free DC buck and boost voltage regulators that are:

  • 100% RF silent

  • Ultra-compact

  • High efficiency

  • Highly radiation tolerant

Typical Voltage Regulator Specifications:

Our team is developing devices with a wide range of specifications. Our devices typically deliver performance within the following ranges:

  • Input voltage: 1.5V-26V

  • Output voltage: 0.7V-5V

  • Output current: Up to 3A

  • Peak efficiency: 60%-85% depending on step

  • Total ionizing dose limit: Up to 1 Mrad (Si)

Optocouplers

Our photovoltaic-output optocouplers provide unprecedented power transfer efficiency in a very small footprint. Our devices open up possibilities for novel circuit concepts in applications with stringent noise and performance requirements, and are suitable for harsh radiation and temperature environments.

Typical Optocoupler Specifications:

  • Input voltage: 1.3-1.6V

  • Photovoltaic open-circuit voltage: 1V-1.2V

  • Peak efficiency*: >52% @ 50mA input current

  • Radiation tolerance: withstand up to 1e15/cm^2 1 MeV electrons

*Defined as ratio of PV maximum power output versus power supplied to light emitting element.

Devices are available in SOIC-8 packages or compact 4mm QFN-16 surface mount packages. All our devices are designed to be hardened to displacement damage and have been characterized using NIST 1 MeV electron irradiation as well as 2 MeV proton irradiation.